Source/Drain Junction Partition in MOS Snapback Modeling for ESD Simulation
Snapback and the ideal ESD protection solution (Electrostatic Discharge)
MOSFET snapback sustaining and breakover voltage as a function of... | Download Scientific Diagram
Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET
ggNMOS (grounded-gated NMOS)
Snapback breakdown ESD device based on zener diodes on silicon-on-insulator technology - ScienceDirect
Multiple current filaments and filament confinement in silicon based PIN diodes
Explain the snapback phenomenon in NMOS devices - Siliconvlsi
Snapback curves of a NMOS w/ a gate resistor (lines: simulation,... | Download Scientific Diagram
Characteristics of an Extended Drain N-Type MOS Device for Electrostatic Discharge Protection of a LCD Driver Chip Operating at
GGNMOS ESD Protection Simulation
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
Impact from IC On-Chip Protection Design on EOS - In Compliance Magazine
MOSFET snapback sustaining and breakover voltage as a function of... | Download Scientific Diagram
Snapback‐free reverse conducting IGBT with p‐poly trench‐collectors - Huang - 2020 - Electronics Letters - Wiley Online Library
ESD Device Modeling: Part 1 - In Compliance Magazine
Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar
Are Nexperia Power MOSFETs ESD Protected? - YouTube
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
Snapback avoidance design flow for a memory technology - ppt video online download
Technical considerations and protection mechanism for ESD event...
Figure 1 from A Study of Snapback and Parasitic Bipolar Action for ESD NMOS Modeling | Semantic Scholar
Figure 1 from Modeling MOS snapback for circuit-level ESD simulation using BSIM3 and VBIC models | Semantic Scholar
parasitic BJT(기생 BJT; snapback, latch up) : 네이버 블로그
Double Snapback Characteristics in High-Voltage nMOSFETs and the Impact to On-Chip ESD Protection Design
Electronics | Free Full-Text | Simulation Study of Low Turn-Off Loss and Snapback-Free SA-IGBT with Injection-Enhanced p-Floating Layer
